1N5809E3
vs
JAN1N5809CB
feature comparison
All Stats
Differences Only
Pbfree Code
Yes
No
Rohs Code
Yes
No
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
MICROSEMI CORP
MICROSEMI CORP
Package Description
ROHS COMPLIANT, HERMETIC SEALED, GLASS, B PACKAGE-2
HERMETIC SEALED, GLASS, E, 2 PIN
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Samacsys Manufacturer
Microsemi Corporation
Additional Feature
HIGH RELIABILITY
HIGH RELIABILITY
Application
ULTRA FAST RECOVERY POWER
ULTRA FAST RECOVERY
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
0.875 V
JESD-30 Code
O-LALF-W2
O-LALF-W2
JESD-609 Code
e3
e0
Non-rep Pk Forward Current-Max
125 A
125 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
-65 °C
Output Current-Max
3 A
3 A
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Rep Pk Reverse Voltage-Max
100 V
100 V
Reverse Current-Max
5 µA
Reverse Recovery Time-Max
0.03 µs
0.03 µs
Surface Mount
NO
NO
Technology
AVALANCHE
Terminal Finish
MATTE TIN OVER NICKEL
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
2
Pin Count
2
Qualification Status
Not Qualified
Reference Standard
MIL-19500/742
Compare 1N5809E3 with alternatives
Compare JAN1N5809CB with alternatives