1N5809E3 vs JAN1N5809CB feature comparison

1N5809E3 Microsemi Corporation

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JAN1N5809CB Microsemi Corporation

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Pbfree Code Yes No
Rohs Code Yes No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Package Description ROHS COMPLIANT, HERMETIC SEALED, GLASS, B PACKAGE-2 HERMETIC SEALED, GLASS, E, 2 PIN
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Samacsys Manufacturer Microsemi Corporation
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Application ULTRA FAST RECOVERY POWER ULTRA FAST RECOVERY
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.875 V
JESD-30 Code O-LALF-W2 O-LALF-W2
JESD-609 Code e3 e0
Non-rep Pk Forward Current-Max 125 A 125 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Output Current-Max 3 A 3 A
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Current-Max 5 µA
Reverse Recovery Time-Max 0.03 µs 0.03 µs
Surface Mount NO NO
Technology AVALANCHE
Terminal Finish MATTE TIN OVER NICKEL TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 2
Pin Count 2
Qualification Status Not Qualified
Reference Standard MIL-19500/742

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