1N5767
vs
5082-3080
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
BROADCOM INC
|
BROADCOM INC
|
Package Description |
HERMETIC SEALED, GLASS PACKAGE-2
|
HERMETIC SEALED, GLASS PACKAGE-2
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.80
|
8541.10.00.80
|
Samacsys Manufacturer |
Avago Technologies
|
|
Additional Feature |
LOW HARMONIC DISTORTION
|
LOW HARMONIC DISTORTION
|
Application |
ATTENUATOR; SWITCHING
|
ATTENUATOR; SWITCHING
|
Breakdown Voltage-Min |
100 V
|
100 V
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE
|
SINGLE
|
Diode Capacitance-Max |
0.4 pF
|
0.4 pF
|
Diode Capacitance-Nom |
0.4 pF
|
0.4 pF
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Forward Resistance-Max |
2.5 Ω
|
2.5 Ω
|
Diode Res Test Current |
100 mA
|
100 mA
|
Diode Res Test Frequency |
100 MHz
|
100 MHz
|
Diode Type |
PIN DIODE
|
PIN DIODE
|
JESD-30 Code |
O-LALF-W2
|
O-LALF-W2
|
JESD-609 Code |
e0
|
e0
|
Minority Carrier Lifetime-Nom |
1.3 µs
|
1.3 µs
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-65 °C
|
|
Package Body Material |
GLASS
|
GLASS
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Power Dissipation-Max |
0.25 W
|
0.25 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Technology |
POSITIVE-INTRINSIC-NEGATIVE
|
POSITIVE-INTRINSIC-NEGATIVE
|
Terminal Finish |
TIN LEAD
|
TIN LEAD
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
AXIAL
|
AXIAL
|
Base Number Matches |
3
|
3
|
Reverse Test Voltage |
|
50 V
|
|
|
|
Compare 1N5767 with alternatives
Compare 5082-3080 with alternatives