1N5711 vs JAN1N5711 feature comparison

1N5711 Avago Technologies

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JAN1N5711 Cobham Semiconductor Solutions

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer AVAGO TECHNOLOGIES INC AEROFLEX/METELICS INC
Package Description O-LALF-W2 HERMETIC SEALED, GLASS PACAKGE-2
Pin Count 2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Samacsys Manufacturer Avago Technologies
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.41 V
JESD-30 Code O-LALF-W2 O-LALF-W2
JESD-609 Code e0 e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 200 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Output Current-Max 0.015 A 0.015 A
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 70 V
Surface Mount NO NO
Technology SCHOTTKY SCHOTTKY
Terminal Finish TIN LEAD TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) 40
Base Number Matches 3 1
JEDEC-95 Code DO-35
Power Dissipation-Max 0.25 W
Reference Standard MIL-19500

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