1N5622TR
vs
JANS1N5622
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
MICROCHIP TECHNOLOGY INC
Package Description
E-PALF-W2
HERMETIC SEALED, GLASS, A PACKAGE-2
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
HTS Code
8541.10.00.80
Application
GENERAL PURPOSE
GENERAL PURPOSE
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.2 V
JESD-30 Code
E-XALF-W2
O-LALF-W2
JESD-609 Code
e0
e0
Non-rep Pk Forward Current-Max
50 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Output Current-Max
1 A
1 A
Package Body Material
UNSPECIFIED
GLASS
Package Shape
ELLIPTICAL
ROUND
Package Style
LONG FORM
LONG FORM
Qualification Status
Not Qualified
Qualified
Rep Pk Reverse Voltage-Max
1000 V
1000 V
Reverse Current-Max
0.5 µA
Reverse Test Voltage
1000 V
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
6
Rohs Code
Factory Lead Time
39 Weeks
Additional Feature
HIGH RELIABILITY
Operating Temperature-Max
200 °C
Operating Temperature-Min
-65 °C
Reference Standard
MIL-19500
Reverse Recovery Time-Max
2 µs
Technology
AVALANCHE
Compare 1N5622TR with alternatives
Compare JANS1N5622 with alternatives