1N5617
vs
JAN1N5617
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
MICROSEMI CORP
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Application
GENERAL PURPOSE
GENERAL PURPOSE
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.2 V
JESD-30 Code
E-PALF-W2
O-LALF-W2
JESD-609 Code
e0
e0
Non-rep Pk Forward Current-Max
50 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
200 °C
Operating Temperature-Min
-65 °C
Output Current-Max
1 A
1 A
Package Body Material
PLASTIC/EPOXY
GLASS
Package Shape
ELLIPTICAL
ROUND
Package Style
LONG FORM
LONG FORM
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
400 V
400 V
Reverse Recovery Time-Max
0.15 µs
0.15 µs
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
Tin/Lead (Sn/Pb)
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
10
2
Rohs Code
No
Part Package Code
DO-7
Package Description
HERMETIC SEALED, GLASS, SIMILAR TO DO-7, 2 PIN
Pin Count
2
Samacsys Manufacturer
Microsemi Corporation
Reference Standard
MIL-19500/429J
Compare 1N5617 with alternatives
Compare JAN1N5617 with alternatives