1N5615S
vs
JAN1N5615
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
SENSITRON SEMICONDUCTOR
|
MICROCHIP TECHNOLOGY INC
|
| Package Description |
E-XALF-W2
|
HERMETIC SEALED, GLASS, SIMILAR TO DO-7, 2 PIN
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.80
|
|
| Application |
FAST RECOVERY
|
GENERAL PURPOSE
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.6 V
|
1.2 V
|
| JESD-30 Code |
E-XALF-W2
|
O-LALF-W2
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
200 °C
|
| Operating Temperature-Min |
-65 °C
|
|
| Output Current-Max |
1 A
|
1 A
|
| Package Body Material |
UNSPECIFIED
|
GLASS
|
| Package Shape |
ELLIPTICAL
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Qualification Status |
Not Qualified
|
Qualified
|
| Rep Pk Reverse Voltage-Max |
200 V
|
200 V
|
| Reverse Current-Max |
1 µA
|
|
| Reverse Recovery Time-Max |
0.15 µs
|
0.15 µs
|
| Reverse Test Voltage |
200 V
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
1
|
2
|
| Rohs Code |
|
No
|
| Factory Lead Time |
|
24 Weeks
|
| JESD-609 Code |
|
e0
|
| Non-rep Pk Forward Current-Max |
|
50 A
|
| Reference Standard |
|
MIL-19500/429J
|
| Technology |
|
AVALANCHE
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|
Compare 1N5615S with alternatives
Compare JAN1N5615 with alternatives