1N5553
vs
1N5553E3
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
INTERNATIONAL SEMICONDUCTOR INC
MICROSEMI CORP
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Application
GENERAL PURPOSE
GENERAL PURPOSE
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.3 V
1.3 V
JESD-30 Code
O-LALF-W2
O-LALF-W2
Non-rep Pk Forward Current-Max
100 A
100 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Output Current-Max
3 A
3 A
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
800 V
800 V
Reverse Recovery Time-Max
2 µs
2 µs
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
5
Pbfree Code
Rohs Code
Package Description
ROHS COMPLIANT, HERMETIC SEALED, GLASS, B PACKAGE-2
Additional Feature
HIGH RELIABILITY
Operating Temperature-Min
-65 °C
Reverse Current-Max
1 µA
Technology
AVALANCHE
Compare 1N5553 with alternatives
Compare 1N5553E3 with alternatives