1N5525B(DO35)E3
vs
JAN1N5525B-1
feature comparison
Part Life Cycle Code |
Transferred
|
Contact Manufacturer
|
Ihs Manufacturer |
MICROSEMI CORP
|
HI-REL COMPONENTS
|
Package Description |
O-LALF-W2
|
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.50
|
8541.10.00.50
|
Additional Feature |
LOW VOLTAGE AVALANCHE
|
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
|
Diode Type |
ZENER DIODE
|
ZENER DIODE
|
JEDEC-95 Code |
DO-35
|
|
JESD-30 Code |
O-LALF-W2
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
|
Package Body Material |
GLASS
|
|
Package Shape |
ROUND
|
|
Package Style |
LONG FORM
|
|
Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
Power Dissipation-Max |
0.25 W
|
0.4 W
|
Reference Voltage-Nom |
6.2 V
|
6.2 V
|
Surface Mount |
NO
|
NO
|
Technology |
ZENER
|
|
Terminal Form |
WIRE
|
|
Terminal Position |
AXIAL
|
|
Voltage Tol-Max |
5%
|
5%
|
Working Test Current |
1 mA
|
1 mA
|
Base Number Matches |
1
|
9
|
Dynamic Impedance-Max |
|
30 Ω
|
Operating Temperature-Max |
|
175 °C
|
|
|
|
Compare 1N5525B(DO35)E3 with alternatives
Compare JAN1N5525B-1 with alternatives