1N5418TR
vs
1N5625-TAP
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
VISHAY SEMICONDUCTORS
Package Description
E-LALF-W2
E-LALF-W2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Factory Lead Time
13 Weeks
Samacsys Manufacturer
Vishay
Application
FAST SOFT RECOVERY
GENERAL PURPOSE
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.5 V
1 V
JESD-30 Code
E-LALF-W2
E-LALF-W2
JESD-609 Code
e2
e2
Non-rep Pk Forward Current-Max
100 A
100 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Output Current-Max
3 A
3 A
Package Body Material
GLASS
GLASS
Package Shape
ELLIPTICAL
ELLIPTICAL
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
260
260
Rep Pk Reverse Voltage-Max
400 V
400 V
Reverse Current-Max
1 µA
Reverse Recovery Time-Max
0.1 µs
6 µs
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Tin/Silver (Sn96.5Ag3.5)
TIN SILVER
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
30
30
Base Number Matches
1
1
Pbfree Code
Pin Count
2
Additional Feature
METALLURGICALLY BONDED
Qualification Status
Not Qualified
Compare 1N5418TR with alternatives
Compare 1N5625-TAP with alternatives