1N5625-TAP
vs
1N5625
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
VISHAY SEMICONDUCTORS
EIC SEMICONDUCTOR CO LTD
Package Description
E-LALF-W2
Pin Count
2
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Additional Feature
METALLURGICALLY BONDED
HIGH RELIABILITY
Application
GENERAL PURPOSE
GENERAL PURPOSE
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1 V
1 V
JESD-30 Code
E-LALF-W2
O-PALF-W2
JESD-609 Code
e2
Non-rep Pk Forward Current-Max
100 A
125 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-65 °C
Output Current-Max
3 A
3 A
Package Body Material
GLASS
PLASTIC/EPOXY
Package Shape
ELLIPTICAL
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
260
NOT SPECIFIED
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
400 V
400 V
Reverse Recovery Time-Max
6 µs
Surface Mount
NO
NO
Technology
AVALANCHE
Terminal Finish
TIN SILVER
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
30
NOT SPECIFIED
Base Number Matches
2
18
Reverse Current-Max
5 µA
Compare 1N5625-TAP with alternatives
Compare 1N5625 with alternatives