1N5402
vs
HFM303B-T
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
GALAXY SEMI-CONDUCTOR CO LTD
|
RECTRON LTD
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1 V
|
1 V
|
| Non-rep Pk Forward Current-Max |
200 A
|
200 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Output Current-Max |
3 A
|
3 A
|
| Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
| Rep Pk Reverse Voltage-Max |
200 V
|
200 V
|
| Surface Mount |
NO
|
YES
|
| Base Number Matches |
2
|
1
|
| Date Of Intro |
|
2018-10-13
|
| Additional Feature |
|
LOW LEAKAGE CURRENT
|
| Application |
|
EFFICIENCY
|
| JEDEC-95 Code |
|
DO-214AA
|
| JESD-30 Code |
|
R-PDSO-C2
|
| Number of Terminals |
|
2
|
| Operating Temperature-Min |
|
-55 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Reverse Current-Max |
|
0.3 µA
|
| Reverse Recovery Time-Max |
|
0.05 µs
|
| Reverse Test Voltage |
|
200 V
|
| Terminal Form |
|
C BEND
|
| Terminal Position |
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare 1N5402 with alternatives
Compare HFM303B-T with alternatives