1N5397G-T
vs
1N5397G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
GALAXY SEMI-CONDUCTOR CO LTD
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
Additional Feature
LOW POWER LOSS
Application
EFFICIENCY
GENERAL PURPOSE
Case Connection
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1 V
1.1 V
JEDEC-95 Code
DO-204AC
DO-15
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Pk Forward Current-Max
50 A
50 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-55 °C
Output Current-Max
1.5 A
1.5 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Reference Standard
IEC-61249-2-21
Rep Pk Reverse Voltage-Max
600 V
600 V
Reverse Current-Max
5 µA
Reverse Test Voltage
600 V
Surface Mount
NO
NO
Terminal Finish
Matte Tin (Sn)
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
3
32
Peak Reflow Temperature (Cel)
260
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