1N5281BTRE3 vs JAN1N6355 feature comparison

1N5281BTRE3 Microsemi Corporation

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JAN1N6355 Bkc Semiconductors Inc

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Rohs Code Yes No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP BKC SEMICONDUCTORS INC
Reach Compliance Code compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Configuration SINGLE SINGLE
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 2500 Ω 1800 Ω
Number of Elements 1 1
Operating Temperature-Max 175 °C 200 °C
Power Dissipation-Max 0.5 W 0.5 W
Reference Voltage-Nom 200 V 200 V
Surface Mount NO NO
Voltage Tol-Max 5% 5%
Working Test Current 0.65 mA 0.65 mA
Base Number Matches 1 2
Additional Feature LOW NOISE, HIGH SURGE CAPABILITY
Case Connection ISOLATED
Diode Element Material SILICON
JEDEC-95 Code DO-41
JESD-30 Code O-LALF-W2
JESD-609 Code e0
Knee Impedance-Max 6500 Ω
Number of Terminals 2
Package Body Material GLASS
Package Shape ROUND
Package Style LONG FORM
Polarity UNIDIRECTIONAL
Qualification Status Not Qualified
Reference Standard MIL-19500/533
Reverse Current-Max 0.05 µA
Technology ZENER
Terminal Finish TIN LEAD
Terminal Form WIRE
Terminal Position AXIAL
Voltage Temp Coeff-Max 220 mV/°C

Compare 1N5281BTRE3 with alternatives

Compare JAN1N6355 with alternatives