1N5281BTRE3
vs
1N5281B-G
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
MICROSEMI CORP
|
SENSITRON SEMICONDUCTOR
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| Dynamic Impedance-Max |
2500 Ω
|
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
175 °C
|
|
| Power Dissipation-Max |
0.5 W
|
0.5 W
|
| Reference Voltage-Nom |
200 V
|
200 V
|
| Surface Mount |
NO
|
NO
|
| Voltage Tol-Max |
5%
|
5%
|
| Working Test Current |
0.65 mA
|
0.65 mA
|
| Base Number Matches |
1
|
1
|
| Pbfree Code |
|
Yes
|
| Part Package Code |
|
DO-35
|
| Package Description |
|
O-XALF-W2
|
| Pin Count |
|
2
|
| Case Connection |
|
ISOLATED
|
| Diode Element Material |
|
SILICON
|
| JEDEC-95 Code |
|
DO-35
|
| JESD-30 Code |
|
O-XALF-W2
|
| Number of Terminals |
|
2
|
| Package Body Material |
|
UNSPECIFIED
|
| Package Shape |
|
ROUND
|
| Package Style |
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Polarity |
|
UNIDIRECTIONAL
|
| Qualification Status |
|
Not Qualified
|
| Technology |
|
ZENER
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
AXIAL
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare 1N5281BTRE3 with alternatives
Compare 1N5281B-G with alternatives