1N4935GHA0G
vs
FR103G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description
O-PALF-W2
PLASTIC PACKAGE-2
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
HTS Code
8541.10.00.80
Additional Feature
HIGH RELIABILITY
HIGH RELIABILITY
Application
EFFICIENCY
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.2 V
JEDEC-95 Code
DO-204AL
DO-41
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e3
Non-rep Pk Forward Current-Max
30 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Output Current-Max
1 A
1 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
260
NOT SPECIFIED
Reference Standard
AEC-Q101
Rep Pk Reverse Voltage-Max
200 V
200 V
Reverse Current-Max
5 µA
Reverse Recovery Time-Max
0.2 µs
0.15 µs
Surface Mount
NO
NO
Terminal Finish
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
10
NOT SPECIFIED
Base Number Matches
1
2
Qualification Status
Not Qualified
Compare 1N4935GHA0G with alternatives
Compare FR103G with alternatives