1N4747AR1 vs 1N4747AR1G feature comparison

1N4747AR1 Taiwan Semiconductor

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1N4747AR1G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Category CO2 Kg 8.7
EU RoHS Version RoHS 2 (2015/863/EU)
EU RoHS Exemptions 7(a), 7(c)-I
Candidate List Date 2024-06-27
SVHC Over MCV 7439-92-1
Conflict Mineral Status DRC Conflict Free
Conflict Mineral Status Source CMRT V6.40
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 22 Ω 22 Ω
JEDEC-95 Code DO-204AL DO-204AL
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Reference Voltage-Nom 20 V 20 V
Surface Mount NO NO
Technology ZENER ZENER
Terminal Finish MATTE TIN MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) 10 10
Voltage Tol-Max 5% 5%
Working Test Current 12.5 mA 12.5 mA
Base Number Matches 2 1

Compare 1N4747AR1 with alternatives

Compare 1N4747AR1G with alternatives