1N4448-G
vs
BAS16W
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
SIEMENS A G
|
| Package Description |
O-LALF-W2
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| Additional Feature |
HIGH RELIABILITY
|
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JEDEC-95 Code |
DO-35
|
|
| JESD-30 Code |
O-LALF-W2
|
R-PDSO-G3
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
3
|
| Output Current-Max |
0.15 A
|
0.25 A
|
| Package Body Material |
GLASS
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
LONG FORM
|
SMALL OUTLINE
|
| Power Dissipation-Max |
0.5 W
|
0.25 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
75 V
|
|
| Reverse Recovery Time-Max |
0.004 µs
|
0.006 µs
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
WIRE
|
GULL WING
|
| Terminal Position |
AXIAL
|
DUAL
|
| Base Number Matches |
4
|
36
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.70
|
| Forward Voltage-Max (VF) |
|
1.25 V
|
| Reverse Current-Max |
|
1 µA
|
|
|
|
Compare 1N4448-G with alternatives
Compare BAS16W with alternatives