1N4448-G
vs
1N4448,143
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
NXP SEMICONDUCTORS
|
| Package Description |
O-LALF-W2
|
O-LALF-W2
|
| Reach Compliance Code |
unknown
|
compliant
|
| Additional Feature |
HIGH RELIABILITY
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JEDEC-95 Code |
DO-35
|
DO-35
|
| JESD-30 Code |
O-LALF-W2
|
O-LALF-W2
|
| Moisture Sensitivity Level |
1
|
1
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Output Current-Max |
0.15 A
|
0.2 A
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Power Dissipation-Max |
0.5 W
|
0.5 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
75 V
|
100 V
|
| Reverse Recovery Time-Max |
0.004 µs
|
0.004 µs
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
4
|
2
|
| Part Package Code |
|
AXIAL
|
| Pin Count |
|
2
|
| Manufacturer Package Code |
|
SOD27
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.80
|
| Forward Voltage-Max (VF) |
|
0.72 V
|
| JESD-609 Code |
|
e3
|
| Non-rep Pk Forward Current-Max |
|
0.5 A
|
| Operating Temperature-Max |
|
200 °C
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Terminal Finish |
|
TIN
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
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