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1N4448,143 vs 1N4448.TR feature comparison

1N4448,143 NXP Semiconductors

Buy Now Datasheet

1N4448.TR Texas Instruments

Buy Now Datasheet
Rohs Code Yes No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer NXP SEMICONDUCTORS NATIONAL SEMICONDUCTOR CORP
Part Package Code AXIAL
Package Description O-LALF-W2 O-LALF-W2
Pin Count 2
Manufacturer Package Code SOD27
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.70
Application GENERAL PURPOSE GENERAL PURPOSE
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.72 V 1 V
JEDEC-95 Code DO-35 DO-35
JESD-30 Code O-LALF-W2 O-LALF-W2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 0.5 A 4 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 200 °C 175 °C
Output Current-Max 0.2 A 0.2 A
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.5 W 0.5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Surface Mount NO NO
Terminal Finish TIN Tin/Lead (Sn/Pb)
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 2 2
Reverse Current-Max 5 µA
Diodes » Rectifier Diodes
Diodes » Rectifier Diodes

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