1N4150W-R1-00001
vs
1N4150W-T1
feature comparison
All Stats
Differences Only
Rohs Code
Yes
No
Part Life Cycle Code
Active
Active
Ihs Manufacturer
PAN JIT INTERNATIONAL INC
WON-TOP ELECTRONICS CO LTD
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.70
8541.10.00.70
Category CO2 Kg
8.8
Compliance Temperature Grade
Military: -55C to +150C
EU RoHS Version
RoHS 2 (2015/863/EU)
Candidate List Date
2024-01-23
Conflict Mineral Status
DRC Conflict Free
Conflict Mineral Status Source
CMRT V6.22
Application
GENERAL PURPOSE
GENERAL PURPOSE
Breakdown Voltage-Min
50 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1 V
1 V
JESD-30 Code
R-PDSO-G2
R-PDSO-G2
Non-rep Pk Forward Current-Max
0.5 A
4 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Output Current-Max
0.2 A
0.2 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Power Dissipation-Max
0.41 W
0.41 W
Rep Pk Reverse Voltage-Max
50 V
50 V
Reverse Current-Max
100 µA
Reverse Recovery Time-Max
0.004 µs
0.004 µs
Reverse Test Voltage
50 V
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Base Number Matches
1
2
Pbfree Code
No
Package Description
PLASTIC PACKAGE-2
Pin Count
2
JESD-609 Code
e0
Terminal Finish
TIN LEAD
Compare 1N4150W-R1-00001 with alternatives
Compare 1N4150W-T1 with alternatives