1N4150W-R1-00001 vs 1N4150W-T1 feature comparison

1N4150W-R1-00001 PanJit Semiconductor

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1N4150W-T1 Won-Top Electronics Co Ltd

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Rohs Code Yes No
Part Life Cycle Code Active Active
Ihs Manufacturer PAN JIT INTERNATIONAL INC WON-TOP ELECTRONICS CO LTD
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Category CO2 Kg 8.8
Compliance Temperature Grade Military: -55C to +150C
EU RoHS Version RoHS 2 (2015/863/EU)
Candidate List Date 2024-01-23
Conflict Mineral Status DRC Conflict Free
Conflict Mineral Status Source CMRT V6.22
Application GENERAL PURPOSE GENERAL PURPOSE
Breakdown Voltage-Min 50 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1 V
JESD-30 Code R-PDSO-G2 R-PDSO-G2
Non-rep Pk Forward Current-Max 0.5 A 4 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Output Current-Max 0.2 A 0.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.41 W 0.41 W
Rep Pk Reverse Voltage-Max 50 V 50 V
Reverse Current-Max 100 µA
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Reverse Test Voltage 50 V
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 2
Pbfree Code No
Package Description PLASTIC PACKAGE-2
Pin Count 2
JESD-609 Code e0
Terminal Finish TIN LEAD

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