1N4150W-R1-00001 vs 1N4150W-HE3-18 feature comparison

1N4150W-R1-00001 PanJit Semiconductor

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1N4150W-HE3-18 Vishay Intertechnologies

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer PAN JIT INTERNATIONAL INC VISHAY INTERTECHNOLOGY INC
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Application GENERAL PURPOSE GENERAL PURPOSE
Breakdown Voltage-Min 50 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V
JESD-30 Code R-PDSO-G2 R-PDSO-G2
Non-rep Pk Forward Current-Max 0.5 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 0.2 A 0.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.41 W 0.41 W
Rep Pk Reverse Voltage-Max 50 V 50 V
Reverse Current-Max 100 µA
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Reverse Test Voltage 50 V
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 1
Pbfree Code Yes
Package Description ROHS COMPLIANT PACKAGE-2
Pin Count 2
Samacsys Manufacturer Vishay
Case Connection UNSPECIFIED
JESD-609 Code e3
Moisture Sensitivity Level 1
Reference Standard AEC-Q101
Terminal Finish MATTE TIN

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