1N4150W-GT1 vs 1N4150W feature comparison

1N4150W-GT1 Sangdest Microelectronics (Nanjing) Co Ltd

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1N4150W PanJit Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD PAN JIT INTERNATIONAL INC
Package Description R-PDSO-G2 ROHS COMPLIANT, PLASTIC PACKAGE-2
Reach Compliance Code unknown compliant
Application GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-G2 R-PDSO-G2
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Output Current-Max 0.2 A 0.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.41 W 0.41 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 50 V 50 V
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 2 4
Pbfree Code Yes
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.70
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C

Compare 1N4150W-GT1 with alternatives

Compare 1N4150W with alternatives