1N4150W
vs
1N4150W-R1-10001
feature comparison
All Stats
Differences Only
Pbfree Code
No
Rohs Code
No
Yes
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
SENSITRON SEMICONDUCTOR
PAN JIT INTERNATIONAL INC
Package Description
R-PDSO-G2
Pin Count
2
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.70
8541.10.00.70
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1 V
1 V
JESD-30 Code
R-PDSO-G2
R-PDSO-G2
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-55 °C
Output Current-Max
0.2 A
0.2 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Power Dissipation-Max
0.41 W
0.41 W
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
50 V
50 V
Reverse Recovery Time-Max
0.004 µs
0.004 µs
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Base Number Matches
4
1
Application
GENERAL PURPOSE
Breakdown Voltage-Min
50 V
Non-rep Pk Forward Current-Max
0.5 A
Reverse Current-Max
100 µA
Reverse Test Voltage
50 V
Compare 1N4150W with alternatives
Compare 1N4150W-R1-10001 with alternatives