1N4150
vs
1N4150
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
NTE ELECTRONICS INC
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
NTE ELECTRONICS
Application
ULTRA FAST RECOVERY
Breakdown Voltage-Min
75 V
Case Connection
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1 V
0.87 V
JEDEC-95 Code
DO-35
DO-35
JESD-30 Code
O-XALF-W2
O-LALF-W2
Non-rep Pk Forward Current-Max
1 A
0.6 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
Output Current-Max
0.2 A
0.2 A
Package Body Material
UNSPECIFIED
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Power Dissipation-Max
0.5 W
Rep Pk Reverse Voltage-Max
50 V
50 V
Reverse Current-Max
0.1 µA
Reverse Recovery Time-Max
0.006 µs
0.006 µs
Reverse Test Voltage
50 V
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
1
Rohs Code
Part Package Code
DO-35
Peak Reflow Temperature (Cel)
260