1N4150 vs 1N4150 feature comparison

1N4150 Bytesonic Corporation

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1N4150 Galaxy Microelectronics

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Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer BYTESONIC ELECTRONICS CO LTD CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70
Additional Feature HIGH RELIABILITY
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 Code DO-35
JESD-30 Code O-LALF-W2
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Output Current-Max 0.2 A 0.2 A
Package Body Material GLASS
Package Shape ROUND
Package Style LONG FORM
Power Dissipation-Max 0.5 W
Reverse Recovery Time-Max 0.004 µs 0.006 µs
Surface Mount NO NO
Terminal Form WIRE
Terminal Position AXIAL
Base Number Matches 1 1
Rohs Code Yes
Part Package Code DO-35
Forward Voltage-Max (VF) 0.87 V
Non-rep Pk Forward Current-Max 0.6 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 50 V

Compare 1N4150 with alternatives

Compare 1N4150 with alternatives