1N4149
vs
JAN1N4150
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
INTERNATIONAL SEMICONDUCTOR INC
M/A-COM TECHNOLOGY SOLUTIONS INC
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.70
8541.10.00.70
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1 V
JEDEC-95 Code
DO-35
DO-35
JESD-30 Code
O-LALF-W2
O-LALF-W2
JESD-609 Code
e0
e0
Non-rep Pk Forward Current-Max
2 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
200 °C
Output Current-Max
0.15 A
0.3 A
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Power Dissipation-Max
0.5 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
100 V
Reverse Recovery Time-Max
0.004 µs
0.004 µs
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
4
Package Description
HERMATIC SEALED, GLASS PACKAGE-2
Reference Standard
MIL-19500/231
Compare 1N4149 with alternatives
Compare JAN1N4150 with alternatives