1N4148W-G-N0RBG
vs
1N914BWSR9G
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Package Description
R-PDSO-G2
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.70
8541.10.00.70
Application
GENERAL PURPOSE
EFFICIENCY
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
JESD-30 Code
R-PDSO-G2
R-PDSO-F2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-65 °C
Output Current-Max
0.15 A
0.15 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Power Dissipation-Max
0.35 W
0.2 W
Rep Pk Reverse Voltage-Max
100 V
100 V
Reverse Recovery Time-Max
0.004 µs
0.004 µs
Surface Mount
YES
YES
Terminal Finish
MATTE TIN OVER NICKEL
MATTE TIN
Terminal Form
GULL WING
FLAT
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Rohs Code
Additional Feature
LOW POWER LOSS
Forward Voltage-Max (VF)
1 V
Reverse Current-Max
5 µA
Reverse Test Voltage
75 V
Compare 1N4148W-G-N0RBG with alternatives
Compare 1N914BWSR9G with alternatives