1N4148UB2
vs
BAS116LT1G
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
VPT COMPONENTS
ONSEMI
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.70
8541.10.00.70
Date Of Intro
2019-09-24
Application
FAST RECOVERY
GENERAL PURPOSE
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.2 V
0.9 V
JESD-30 Code
R-CDSO-N3
R-PDSO-G3
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
3
3
Operating Temperature-Max
200 °C
150 °C
Operating Temperature-Min
-65 °C
-55 °C
Output Current-Max
0.2 A
0.2 A
Package Body Material
CERAMIC, METAL-SEALED COFIRED
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Rep Pk Reverse Voltage-Max
75 V
75 V
Reverse Current-Max
75 µA
Reverse Recovery Time-Max
0.005 µs
3 µs
Reverse Test Voltage
75 V
Surface Mount
YES
YES
Terminal Form
NO LEAD
GULL WING
Terminal Position
DUAL
DUAL
Base Number Matches
3
1
Pbfree Code
Part Package Code
SOT-23 (TO-236) 3 LEAD
Package Description
HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
Pin Count
3
Manufacturer Package Code
318
Factory Lead Time
7 Weeks, 4 Days
Samacsys Manufacturer
onsemi
JEDEC-95 Code
TO-236
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Pk Forward Current-Max
0.5 A
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max
0.225 W
Qualification Status
Not Qualified
Terminal Finish
Matte Tin (Sn) - annealed
Time@Peak Reflow Temperature-Max (s)
30
Compare 1N4148UB2 with alternatives
Compare BAS116LT1G with alternatives