1N3595US
vs
BAV99-E3-08
feature comparison
| Pbfree Code |
No
|
Yes
|
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
MICROSEMI CORP
|
VISHAY INTERTECHNOLOGY INC
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
8541.10.00.70
|
| Samacsys Manufacturer |
Microsemi Corporation
|
Vishay
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1 V
|
1.25 V
|
| JESD-30 Code |
O-LELF-R2
|
R-PDSO-G3
|
| JESD-609 Code |
e0
|
e3
|
| Non-rep Pk Forward Current-Max |
4 A
|
4.5 A
|
| Number of Elements |
1
|
2
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
-55 °C
|
| Output Current-Max |
0.2 A
|
0.25 A
|
| Package Body Material |
GLASS
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
LONG FORM
|
SMALL OUTLINE
|
| Qualification Status |
Not Qualified
|
|
| Reverse Current-Max |
0.001 µA
|
50 µA
|
| Reverse Recovery Time-Max |
3 µs
|
0.006 µs
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN LEAD
|
MATTE TIN
|
| Terminal Form |
WRAP AROUND
|
GULL WING
|
| Terminal Position |
END
|
DUAL
|
| Base Number Matches |
4
|
1
|
| Package Description |
|
ROHS COMPLIANT PACKAGE-3
|
| Pin Count |
|
3
|
| Factory Lead Time |
|
14 Weeks, 3 Days
|
| Application |
|
FAST RECOVERY
|
| Breakdown Voltage-Min |
|
70 V
|
| Moisture Sensitivity Level |
|
1
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Power Dissipation-Max |
|
0.39 W
|
| Rep Pk Reverse Voltage-Max |
|
70 V
|
| Reverse Test Voltage |
|
70 V
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare 1N3595US with alternatives
Compare BAV99-E3-08 with alternatives