1N3595US vs FE1F feature comparison

1N3595US Microchip Technology Inc

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FE1F EIC Semiconductor Inc

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Rohs Code No
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC EIC SEMICONDUCTOR CO LTD
Reach Compliance Code compliant compliant
Factory Lead Time 23 Weeks
Samacsys Manufacturer Microchip
Application GENERAL PURPOSE EFFICIENCY
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 0.95 V
JESD-30 Code O-LELF-R2 O-PALF-W2
JESD-609 Code e0
Non-rep Pk Forward Current-Max 4 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -65 °C -50 °C
Output Current-Max 0.2 A 1 A
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Qualification Status Not Qualified
Reverse Current-Max 0.001 µA 2 µA
Reverse Recovery Time-Max 3 µs 0.05 µs
Surface Mount YES NO
Terminal Finish TIN LEAD
Terminal Form WRAP AROUND WIRE
Terminal Position END AXIAL
Base Number Matches 4 3
Pbfree Code Yes
ECCN Code EAR99
HTS Code 8541.10.00.80
Additional Feature LOW LEAKAGE CURRENT
JEDEC-95 Code DO-41
Reference Standard TS 16949
Rep Pk Reverse Voltage-Max 300 V
Reverse Test Voltage 300 V

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