1N3512A vs 1N3512AE3 feature comparison

1N3512A International Semiconductor Inc

Buy Now Datasheet

1N3512AE3 Microsemi Corporation

Buy Now Datasheet
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer INTERNATIONAL SEMICONDUCTOR INC MICROSEMI CORP
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 8 Ω
Number of Elements 1 1
Operating Temperature-Max 200 °C 175 °C
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.4 W 0.5 W
Reference Voltage-Nom 5.6 V 5.6 V
Surface Mount NO NO
Voltage Tol-Max 10% 5%
Working Test Current 20 mA 20 mA
Base Number Matches 3 1
Package Description O-LALF-W2
Diode Element Material SILICON
JEDEC-95 Code DO-35
JESD-30 Code O-LALF-W2
Number of Terminals 2
Operating Temperature-Min -65 °C
Package Body Material GLASS
Package Shape ROUND
Package Style LONG FORM
Technology ZENER
Terminal Form WIRE
Terminal Position AXIAL

Compare 1N3512AE3 with alternatives