We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.

Register or Sign In

1N3512AE3 vs NTE5011A feature comparison

1N3512AE3 Microsemi Corporation

Buy Now Datasheet

NTE5011A NTE Electronics Inc

Buy Now Datasheet
Part Life Cycle Code Transferred Active
Ihs Manufacturer MICROSEMI CORP NTE ELECTRONICS INC
Package Description O-LALF-W2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
JEDEC-95 Code DO-35 DO-35
JESD-30 Code O-LALF-W2 O-PALF-W2
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.5 W 0.5 W
Reference Voltage-Nom 5.6 V 5.6 V
Surface Mount NO NO
Technology ZENER ZENER
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Voltage Tol-Max 5% 5%
Working Test Current 20 mA 20 mA
Base Number Matches 1 1
Rohs Code Yes
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Diodes » Zener Diodes
Diodes » Zener Diodes

Compare 1N3512AE3 with alternatives

Compare NTE5011A with alternatives