1N3506TR
vs
JAN1N5518B
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
CENTRAL SEMICONDUCTOR CORP
|
MOTOROLA INC
|
| Package Description |
O-PALF-W2
|
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Additional Feature |
LOW IMPEDANCE
|
LOW NOISE, HIGH RELIABILITY
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| JEDEC-95 Code |
DO-35
|
DO-7
|
| JESD-30 Code |
O-PALF-W2
|
O-LALF-W2
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Package Body Material |
PLASTIC/EPOXY
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
0.4 W
|
0.4 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reference Voltage-Nom |
3.3 V
|
3.3 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
ZENER
|
ZENER
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
1
|
4
|
| Operating Temperature-Max |
|
200 °C
|
| Operating Temperature-Min |
|
-65 °C
|
| Reverse Current-Max |
|
5 µA
|
| Voltage Tol-Max |
|
5%
|
| Working Test Current |
|
20 mA
|
|
|
|
Compare 1N3506TR with alternatives
Compare JAN1N5518B with alternatives