JAN1N5518B vs JANTX1N5518B feature comparison

JAN1N5518B Microsemi Corporation

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JANTX1N5518B Cobham PLC

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP KNOX SEMICONDUCTORS INC
Part Package Code DO-35
Package Description O-LALF-W2 HERMETIC SEALED, GLASS PACKAGE-2
Pin Count 2 2
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature LOW NOISE LOW NOISE
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
JEDEC-95 Code DO-204AH
JESD-30 Code O-LALF-W2 O-LALF-W2
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.48 W 0.4 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500/437 MIL-19500/437
Reference Voltage-Nom 3.3 V 3.3 V
Surface Mount NO NO
Technology AVALANCHE ZENER
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Voltage Tol-Max 5% 5%
Working Test Current 20 mA 20 mA
Base Number Matches 4 4
Dynamic Impedance-Max 26 Ω
Reverse Current-Max 5 µA
Voltage Temp Coeff-Max

Compare JAN1N5518B with alternatives

Compare JANTX1N5518B with alternatives