18DB4A
vs
CBR2F-040
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
INTERNATIONAL RECTIFIER CORP
|
CENTRAL SEMICONDUCTOR CORP
|
| Package Description |
R-PDIP-W4
|
CASE A
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Additional Feature |
LEAKAGE CURRENT IS NOT AT 25 DEG C
|
|
| Configuration |
BRIDGE, 4 ELEMENTS
|
BRIDGE, 4 ELEMENTS
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
BRIDGE RECTIFIER DIODE
|
BRIDGE RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.2 V
|
1.3 V
|
| JESD-30 Code |
R-PDIP-W4
|
O-PBCY-W4
|
| JESD-609 Code |
e0
|
e0
|
| Non-rep Pk Forward Current-Max |
52 A
|
60 A
|
| Number of Elements |
4
|
4
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Output Current-Max |
1.8 A
|
2 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
IN-LINE
|
CYLINDRICAL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
400 V
|
400 V
|
| Reverse Current-Max |
10 µA
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
TIN LEAD
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
DUAL
|
BOTTOM
|
| Base Number Matches |
1
|
1
|
| Pbfree Code |
|
No
|
| Manufacturer Package Code |
|
CASE A
|
| Breakdown Voltage-Min |
|
400 V
|
| Operating Temperature-Min |
|
-65 °C
|
| Reverse Recovery Time-Max |
|
0.2 µs
|
|
|
|
Compare 18DB4A with alternatives
Compare CBR2F-040 with alternatives