1.5KE12HA0
vs
1.5KE12AHB0G
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Yes
Part Life Cycle Code
Active
Active
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Package Description
O-PALF-W2
O-PALF-W2
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
13.2 V
12.6 V
Breakdown Voltage-Min
10.8 V
11.4 V
Breakdown Voltage-Nom
12 V
12 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
17.3 V
16.7 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-201
DO-201
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e3
e3
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
5 W
Reference Standard
AEC-Q101; UL RECOGNIZED
AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max
9.72 V
10.2 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
1
Compare 1.5KE12HA0 with alternatives
Compare 1.5KE12AHB0G with alternatives