1.5KE12HA0 vs 1.5KE12 feature comparison

1.5KE12HA0 Taiwan Semiconductor

Buy Now Datasheet

1.5KE12 Galaxy Semi-Conductor Co Ltd

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD GALAXY SEMI-CONDUCTOR CO LTD
Package Description O-PALF-W2 O-PALF-W2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 13.2 V 13.2 V
Breakdown Voltage-Min 10.8 V 10.8 V
Breakdown Voltage-Nom 12 V 12 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 17.3 V 17.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-201 DO-201AE
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -50 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 6.5 W
Reference Standard AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 9.72 V 9.72 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 72
Peak Reflow Temperature (Cel) 260

Compare 1.5KE12HA0 with alternatives

Compare 1.5KE12 with alternatives