Parametric results for: sis892adn-t1-ge3 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

5.0 mJ 2

2 hits Apply

DRAIN 2

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

100 V 2

2 hits Apply

Drain Current-Max (ID) (1)

28 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

33 mΩ 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

S-PDSO-C5 2

2 hits Apply

Manufacturer (2)

Vishay Intertechnologies 1 Vishay Siliconix 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

5 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

SQUARE 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Not Recommended 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

52 W 2

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply