Parametric results for: psmn6r0-30yl under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 3

12 hits Apply

13.0 mJ 3 26.0 mJ 4 46.0 mJ 2

Min (mJ) - Max (mJ)

12 hits Apply

DRAIN 9

12 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 9

12 hits Apply

DS Breakdown Voltage-Min (1)

30 V 9

12 hits Apply

Drain Current-Max (ID) (4)

66 A 3 71 A 4 73 A 2 79 A 2

Min (A) - Max (A)

12 hits Apply

Drain-source On Resistance-Max (4)

7.87 mΩ 2 8.1 mΩ 3 8.35 mΩ 2 9.7 mΩ 2

Min (Ω) - Max (Ω)

12 hits Apply

METAL-OXIDE SEMICONDUCTOR 11

12 hits Apply

MO-235 9

12 hits Apply

R-PSSO-G4 9

12 hits Apply

e3 10

12 hits Apply

Manufacturer (2)

Nexperia 6 NXP Semiconductors 6

12 hits Apply

1 10

12 hits Apply

Number of Elements (1)

1 11

12 hits Apply

Number of Terminals (1)

4 9

12 hits Apply

ENHANCEMENT MODE 11

12 hits Apply

150.0 °C 2 175.0 °C 3

Min (°C) - Max (°C)

12 hits Apply

PLASTIC/EPOXY 9

12 hits Apply

RECTANGULAR 9

12 hits Apply

SMALL OUTLINE 9

12 hits Apply

Active 5 Not Recommended 1 Transferred 6

12 hits Apply

260 9 NOT SPECIFIED 1

12 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 11

12 hits Apply

47 W 1 55 W 2 58 W 1

Min (W) - Max (W)

12 hits Apply

Surface Mount (1)

YES 11

12 hits Apply