Parametric results for: lmn200b01-7 under Small Signal Field-Effect Transistors

All Filters Additional Feature Collector Current-Max (IC) Configuration DC Current Gain-Min (hFE) DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

BUILT IN BIAS RESISTOR 1

1 hit Apply

Collector Current-Max (IC) (1)

200 mA 1

1 hit Apply

Configuration (1)

SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR AND RESISTOR 1

1 hit Apply

DC Current Gain-Min (hFE) (1)

60.0 1

1 hit Apply

DS Breakdown Voltage-Min (1)

60 V 1

1 hit Apply

Drain Current-Max (ID) (1)

115 mA 1

1 hit Apply

Drain-source On Resistance-Max (1)

2 Ω 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

5 pF 1

1 hit Apply

R-PDSO-G6 1

1 hit Apply

e3 1

1 hit Apply

Manufacturer (1)

Diodes Incorporated 1

1 hit Apply

1 1

1 hit Apply

Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

6 1

1 hit Apply

ENHANCEMENT MODE 1

1 hit Apply

150.0 °C 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE 1

1 hit Apply

Obsolete 1

1 hit Apply

Yes 1

1 hit Apply

260 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

300 mW 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply