Parametric results for: jantx2n7218 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 6

9 hits Apply

250.0 mJ 8

9 hits Apply

DRAIN 2 ISOLATED 6

9 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 8

9 hits Apply

DS Breakdown Voltage-Min (1)

100 V 9

9 hits Apply

Drain Current-Max (ID) (1)

28 A 9

9 hits Apply

Drain-source On Resistance-Max (2)

77 mΩ 1 125 mΩ 8

Min (Ω) - Max (Ω)

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 9

9 hits Apply

TO-254AA 7

9 hits Apply

R-CBCC-N3 2 R-MSFM-P3 2 S-MSFM-P3 5

9 hits Apply

e0 7

9 hits Apply

Manufacturer (5)

Defense Logistics Agency 1 Infineon Technologies AG 3 International Rectifier 3 Microsemi Corporation 1 Omnirel Corp 1

9 hits Apply

Number of Elements (1)

1 9

9 hits Apply

Number of Terminals (1)

3 9

9 hits Apply

ENHANCEMENT MODE 9

9 hits Apply

150.0 °C 5

9 hits Apply

CERAMIC, METAL-SEALED COFIRED 2 METAL 7

9 hits Apply

RECTANGULAR 4 SQUARE 5

9 hits Apply

CHIP CARRIER 2 FLANGE MOUNT 7

9 hits Apply

Active 4 Obsolete 2 Transferred 3

9 hits Apply

No 4

9 hits Apply

NOT SPECIFIED 4

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 9

9 hits Apply

125 W 2

9 hits Apply

125 W 4

9 hits Apply

Surface Mount (2)

NO 7 YES 2

9 hits Apply