Parametric results for: bss123lt1 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (3)

SINGLE 1 Single 1 SINGLE WITH BUILT-IN DIODE 1

3 hits Apply

DS Breakdown Voltage-Min (1)

100 V 1

3 hits Apply

Drain Current-Max (Abs) (ID) (1)

170 mA 1

3 hits Apply

Drain Current-Max (ID) (1)

170 mA 2

3 hits Apply

Drain-source On Resistance-Max (1)

6 Ω 1

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

4 pF 1

3 hits Apply

TO-236AB 1

3 hits Apply

R-PDSO-G3 1

3 hits Apply

e0 1

3 hits Apply

Manufacturer (3)

Freescale Semiconductor 1 LRC Leshan Radio Co Ltd 1 Motorola Semiconductor Products 1

3 hits Apply

Number of Elements (1)

1 2

3 hits Apply

Number of Terminals (1)

3 1

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 3

3 hits Apply

-55.0 °C 1

3 hits Apply

PLASTIC/EPOXY 1

3 hits Apply

RECTANGULAR 1

3 hits Apply

SMALL OUTLINE 1

3 hits Apply

Contact Manufacturer 1 Obsolete 1 Transferred 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

225 mW 3

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply