Parametric results for: VRF157FLMPG under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Gain-Min (Gp) Surface Mount

SOURCE 1

2 hits Apply

Configuration (1)

SINGLE 1

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DS Breakdown Voltage-Min (1)

170 V 1

2 hits Apply

Drain Current-Max (ID) (1)

60 A 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 1

2 hits Apply

65 pF 1

2 hits Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 1

2 hits Apply

R-CDFM-F2 1

2 hits Apply

Manufacturer (2)

Microchip Technology Inc 1 Microsemi Corporation 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

2 1

2 hits Apply

ENHANCEMENT MODE 1

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200.0 °C 1

2 hits Apply

CERAMIC, METAL-SEALED COFIRED 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

FLANGE MOUNT 1

2 hits Apply

Active 1 Transferred 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 1

2 hits Apply

Power Gain-Min (Gp) (1)

17.0 dB 1

2 hits Apply

Surface Mount (1)

YES 1

2 hits Apply