Parametric results for: TP0606N3-G under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOW THRESHOLD 2

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

60 V 4

4 hits Apply

Drain Current-Max (ID) (1)

320 mA 4

4 hits Apply

Drain-source On Resistance-Max (1)

3.5 Ω 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

35 pF 4

4 hits Apply

TO-92 4

4 hits Apply

O-PBCY-T3 3 O-PBCY-W3 1

4 hits Apply

e3 4

4 hits Apply

Manufacturer (2)

Microchip Technology Inc 3 Supertex Inc 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 4

4 hits Apply

-55.0 °C 3

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

ROUND 4

4 hits Apply

CYLINDRICAL 4

4 hits Apply

Active 3 Transferred 1

4 hits Apply

Yes 3

4 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 4

4 hits Apply

1 W 4

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply