Parametric results for: S28HL01GTFPBHI030 under Flash Memories

All Filters Clock Frequency-Max (fCLK) Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Clock Frequency-Max (fCLK) (1)

166 MHz 2

4 hits Apply

25 2

4 hits Apply

300000.0 Write/Erase Cycles 1 2560000.0 Write/Erase Cycles 1

Min (Write/EraseCycles) - Max (Write/EraseCycles)

4 hits Apply

S-PBGA-B24 2

4 hits Apply

e1 1

4 hits Apply

8 mm 2

4 hits Apply

Manufacturer (2)

Cypress Semiconductor 3 Infineon Technologies AG 1

4 hits Apply

Memory Density (1)

1.0737 Gbit 2

4 hits Apply

FLASH 4

4 hits Apply

Memory Width (1)

8 2

4 hits Apply

3 1

4 hits Apply

1.0 2

4 hits Apply

24 2

4 hits Apply

134.2177 M 2

4 hits Apply

1.28E8 2

4 hits Apply

SYNCHRONOUS 2

4 hits Apply

85.0 °C 2

4 hits Apply

-40.0 °C 2

4 hits Apply

Organization (1)

128MX8 2

4 hits Apply

3-STATE 2

4 hits Apply

PLASTIC/EPOXY 2

4 hits Apply

VBGA 2

4 hits Apply

BGA24,5X5,40 2

4 hits Apply

SQUARE 2

4 hits Apply

GRID ARRAY, VERY THIN PROFILE 2

4 hits Apply

Supply Voltage-Nom (Vsup) (1)

3 V 2

4 hits Apply