Parametric results for: PDTC114YT215 under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

BUILT IN BIAS RESISTANCE RATIO IS 4.7 1 BUILT-IN BIAS RESISTOR RATIO IS 4.7 1

2 hits Apply

Collector Current-Max (IC) (1)

100 mA 2

2 hits Apply

3.5 pF 2

2 hits Apply

Collector-Emitter Voltage-Max (1)

50 V 2

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN RESISTOR 2

2 hits Apply

DC Current Gain-Min (hFE) (1)

100.0 2

2 hits Apply

TO-236AB 2

2 hits Apply

R-PDSO-G3 2

2 hits Apply

e3 2

2 hits Apply

Manufacturer (2)

Nexperia 1 NXP Semiconductors 1

2 hits Apply

1 2

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

3 2

2 hits Apply

150.0 °C 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Active 1 Transferred 1

2 hits Apply

260 2

2 hits Apply

Polarity/Channel Type (1)

NPN 2

2 hits Apply

250 mW 2

2 hits Apply

250 mW 1

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply