Parametric results for: PD55003 under RF Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 9

11 hits Apply

SOURCE 9

11 hits Apply

Configuration (1)

SINGLE 11

11 hits Apply

DS Breakdown Voltage-Min (1)

40 V 9

11 hits Apply

Drain Current-Max (ID) (1)

2.5 A 11

11 hits Apply

METAL-OXIDE SEMICONDUCTOR 11

11 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 9

11 hits Apply

R-PDSO-F2 3 R-PDSO-G2 3 S-PQCC-N12 1 S-PQCC-N5 2

11 hits Apply

e0 3 e3 5

11 hits Apply

Manufacturer (1)

STMicroelectronics 11

11 hits Apply

3 5

11 hits Apply

Number of Elements (1)

1 11

11 hits Apply

Number of Terminals (3)

12 1 2 6 5 2

11 hits Apply

ENHANCEMENT MODE 11

11 hits Apply

150.0 °C 3 165.0 °C 8

Min (°C) - Max (°C)

11 hits Apply

PLASTIC/EPOXY 9

11 hits Apply

RECTANGULAR 6 SQUARE 3

11 hits Apply

CHIP CARRIER 3 SMALL OUTLINE 6

11 hits Apply

Active 5 Obsolete 6

11 hits Apply

No 2

11 hits Apply

250 3 NOT SPECIFIED 1

11 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 11

11 hits Apply

14 W 1 26.6 W 1 31.7 W 8

Min (W) - Max (W)

11 hits Apply

Surface Mount (1)

YES 11

11 hits Apply