Parametric results for: P6SMBJ5.0C under Transient Suppressors

All Filters Additional Feature Breakdown Voltage-Max Breakdown Voltage-Min Breakdown Voltage-Nom Clamping Voltage-Max Configuration Diode Element Material Diode Type JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Polarity Power Dissipation-Max Rep Pk Reverse Voltage-Max Reverse Current-Max Surface Mount Technology

EXCELLENT CLAMPING CAPABILITY 1 EXCELLENT CLAMPING CAPABILITY, PRSM-MIN 8 LOW INDUCTANCE 4 UL RECOGNIZED 2

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6.98 V 1 7 V 3 7.07 V 1 7.25 V 13 7.3 V 2 7.55 V 12 7.8 V 1 7.82 V 1

Min (V) - Max (V)

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Breakdown Voltage-Min (2)

6.4 V 39 6.45 V 1

Min (V) - Max (V)

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Breakdown Voltage-Nom (9)

6.72 V 1 6.735 V 1 6.8 V 3 6.83 V 5 6.9 V 1 6.975 V 1 6.98 V 5 7 V 2 7.11 V 1

Min (V) - Max (V)

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Clamping Voltage-Max (2)

9.2 V 10 9.6 V 10

Min (V) - Max (V)

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Configuration (1)

SINGLE 42

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Diode Element Material (1)

SILICON 42

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Diode Type (1)

TRANS VOLTAGE SUPPRESSOR DIODE 49

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DO-214AA 40 DO-214AC 1

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R-PDSO-C2 42

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e0 10 e3 10

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Manufacturer (12)

Cheng-Yi Electronic Co Ltd 2 Dean Technology 1 Diotec Semiconductor AG 2 Hitano Enterprise Corp 2 HVCA & CKE 1 PanJit Semiconductor 21 Promax-Johnton Electronic Corporation 2 Surge Components Inc 6 Viking Tech Corp 2 WeEn Semiconductor Co Ltd 1 Won-Top Electronics Co Ltd 6 World Products Inc 10

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Number of Elements (1)

1 42

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Polarity (2)

BIDIRECTIONAL 44 UNIDIRECTIONAL 2

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Power Dissipation-Max (1)

5 W 19

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Rep Pk Reverse Voltage-Max (1)

5 V 44

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Reverse Current-Max (3)

5 µA 2 400 µA 1 1.6 mA 1

Min (µA) - Max (µA)

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Surface Mount (1)

YES 46

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Technology (1)

AVALANCHE 42

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