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NTLJS2103PTBG
onsemi
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$0.4026 | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 6 | 12 V | 1 | 5.9 A | 40 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 3.3 W | SWITCHING | SILICON | S-PDSO-N6 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | SQUARE | SMALL OUTLINE | Matte Tin (Sn) - annealed | NO LEAD | DUAL | ON SEMICONDUCTOR | WDFN6, 2 x 2 x 0.75 mm, 0.65 mm Pitch | SMALL OUTLINE, R-PDSO-N6 | 6 | 506AP | compliant | EAR99 | onsemi | |||
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NTLJS2103PTBG
Rochester Electronics LLC
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Check for Price | Yes | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 6 | 12 V | 1 | 5.9 A | 40 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-PDSO-N6 | e3 | COMMERCIAL | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | NO LEAD | DUAL | ROCHESTER ELECTRONICS LLC | SC-88 | 2 X 2 MM, LEAD FREE, CASE 506AP-01, SC-88, WDFN-6 | 6 | CASE 506AP-01 | unknown |