Parametric results for: JAN1N5819UR-1 under Rectifier Diodes
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JAN1N5819UR-1/TR
Microchip Technology Inc
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$10.3698 | Active | 1 A | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | SCHOTTKY | METALLURGICALLY BONDED | 1 | Qualified | O-XELF-R2 | e0 | MIL-19500/586F | DO-213AB | 1 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | 8541.10.00.80 | Microchip | ||||||||||||
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JAN1N5819UR-1
Microsemi Corporation
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$11.2372 | No | No | Transferred | 1 A | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | SCHOTTKY | METALLURGICALLY BONDED | 1 | Not Qualified | O-XELF-R2 | e0 | MIL-19500/586F | DO-213AB | 1 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | unknown | EAR99 | 8541.10.00.80 | Microsemi Corporation | DO-213AB | HERMETIC SEALED PACKAGE-2 | 2 | |||||||
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JAN1N5819UR-1
Sensitron Semiconductors
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Check for Price | No | Obsolete | 1 A | 800 mV | SILICON | RECTIFIER DIODE | SINGLE | YES | 45 V | 1 | SCHOTTKY | 25 A | 1 | Not Qualified | O-LELF-R2 | e0 | MIL | DO-213AB | 125 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | SENSITRON SEMICONDUCTOR | unknown | EAR99 | 8541.10.00.80 | DO-213AB | HERMETIC SEALED, MELF-2 | 2 | ||||||
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JAN1N5819UR-1
Compensated Devices Inc
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Check for Price | Transferred | 1 A | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | SCHOTTKY | METALLURGICALLY BONDED | Not Qualified | O-XELF-R2 | MIL-19500/586 | DO-213AB | 125 °C | -55 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WRAP AROUND | END | COMPENSATED DEVICES INC | unknown | HERMETIC SEALED PACKAGE-2 | ||||||||||||||||
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JAN1N5819UR-1
Defense Logistics Agency
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Check for Price | Active | 1 A | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | SCHOTTKY | METALLURGICALLY BONDED | 1 | Qualified | O-XELF-R2 | MIL-19500/586F | DO-213AB | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WRAP AROUND | END | DEFENSE LOGISTICS AGENCY | unknown | HERMETIC SEALED PACKAGE-2 |